RN2904,LF(CT

Overview

The RN2904,LF(CT is a pre-biased NPN digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES6 surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V and a maximum continuous collector current (Ic) of 100mA. The device features a transition frequency (fT) of 200MHz and a maximum power dissipation of 100mW. DC current gain (hFE) is specified at a minimum of 80 when tested at Ic=10mA and Vce=5V. The saturation voltage (Vce(sat)) is limited to 300mV at Ib=250µA and Ic=5mA. Each transistor includes integrated base (R1) and emitter (R2) resistors, both valued at 47kΩ.

Feature Summary

• Integrates dual NPN transistors with internal biasing resistors to simplify circuit design
• Optimized for high-speed switching applications with a 200MHz transition frequency
• Compact surface-mount packaging reduces board space requirements

Applications

• Switching circuits in consumer electronics
• Interface connection drivers
• Inverter circuit control

Procurement Notes

Verify the specific suffix LF(CT against the manufacturer's official datasheet to confirm the tape-and-reel packaging configuration. Ensure compatibility with RoHS3 standards if required by the target application. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dual NPN configuration with fixed 47kΩ bias resistors is required. Compare hFE and Vce(sat) limits against load requirements. Consider the 100mW power dissipation limit for thermal management. Verify that the 50V voltage rating exceeds the maximum operating voltage in the specific circuit topology.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistor networks. These devices are designed to replace multiple discrete components, reducing assembly complexity and improving reliability in compact electronic designs compared to standard discrete BJT arrays.

Replacement Considerations

Consult official substitution guides for equivalent dual NPN pre-biased transistors with matching 50V/100mA ratings and 47kΩ internal resistors. Verify pinout compatibility with the ES6 package before replacing.