RN2904(T5L,F,T)

RN2904(T5L,F,T)

$0.29
  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-

SKU:fe418466da80 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

Download product information

RN2904(T5L,F,T)

Overview

The RN2904(T5L,F,T) is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in biasing resistors in a compact surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA per element. Internal resistor values are typically 4.7kΩ for the base resistor (R1) and 47kΩ for the emitter resistor (R2). Designed for high-speed switching applications, it offers a transition frequency of 200MHz and a maximum power dissipation of 200mW. The component is housed in a US6 (SOT-363) package.

Feature Summary

  • Integrates dual NPN transistors with fixed internal biasing resistors to simplify circuit design
  • Optimized for high-speed switching operations with a 200MHz transition frequency
  • Compact surface-mount packaging reduces board space requirements

Applications

  • Interface circuits for digital logic level shifting
  • Driver stages for small-signal switching loads
  • Inverter circuits requiring compact form factors

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging specifications and moisture sensitivity levels. Ensure compatibility with automated pick-and-place equipment regarding the US6 package dimensions. Cross-reference the part number with authorized distributors to confirm current production status and availability constraints.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to minimize external component count. The 50V rating and 100mA current capacity suit low-power signal processing tasks. Consider the US6 package size constraints during layout planning. Verify thermal management requirements given the 200mW power dissipation limit in enclosed environments.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine BJTs with internal resistors. These arrays replace multiple discrete components, reducing assembly time and PCB area. The RN2904 specifically provides a dual NPN solution, contrasting with PNP variants like the RN2905 or mixed configurations.

Replacement Considerations

Check for direct equivalents such as the RN2904LF or other RN2904 variants with different packaging suffixes. Verify pinout compatibility and electrical parameter alignment before substitution. Consult Toshiba's official replacement guide for qualified alternative packages within the same product family.

RN2904(T5L,F,T)RN2904(T5L,F,T)
$0.29
Buy Now