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The RN2906,LF is a dual digital transistor manufactured by Toshiba Semiconductor and Storage, featuring two NPN transistors in a single US6 surface-mount package. It integrates internal bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA per element. The device offers a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a typical base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 47 kOhms. Power dissipation is rated at 200mW, and it complies with AEC-Q101 automotive standards.
Verify the specific suffix against official Toshiba documentation to confirm exact configuration and compliance status. Confirm RoHS3 compliance and AEC-Q101 qualification requirements with the manufacturer or authorized distributors before procurement. Ensure the ordering part number matches the required resistance values and package type.
Select this component when a dual NPN pre-biased transistor is required in a US6 package. Verify that the 50V VCEO and 100mA IC ratings meet the circuit demands. Check if the integrated 4.7kOhm base resistor aligns with the drive requirements. Consider the AEC-Q101 qualification if the application involves automotive environments.
The RN2906 belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal biasing networks. This series is designed to reduce component count and board space in switching and logic interface applications. The LF suffix typically indicates lead-free and RoHS-compliant manufacturing.
Cross-reference with other dual NPN digital transistors in US6 packages from manufacturers like ON Semiconductor or Nexperia. Ensure equivalent VCEO, IC, hFE, and resistor values are matched. Verify package pinout compatibility and thermal characteristics before substitution.