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The RN2906,LXHF(CT is an automotive-grade digital transistor manufactured by Toshiba Semiconductor and Storage. It features a dual PNP configuration housed in a US-6 (SOT-363) surface-mount package. The device integrates internal bias resistors with typical values of R1=4.7kOhm and R2=47kOhm. Key electrical specifications include a collector-emitter voltage (VCEO) of -50V, a continuous collector current (IC) of -0.1A, and a power dissipation (Pd) of 200mW. It meets AEC-Q101 qualification standards for automotive applications and supports operation up to a maximum junction temperature of +150°C.
Verify the complete part number including the suffix LXHF(CT) to ensure correct automotive grade and packaging specification. Confirm AEC-Q101 compliance requirements match the target application environment. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.
Select this component when a dual PNP digital transistor with specific 4.7k/47k resistor ratios is required for automotive designs. Ensure the -50V VCEO rating exceeds the maximum circuit voltage. Verify that the 200mW power dissipation capability is sufficient for the intended load conditions and ambient temperature range.
This part belongs to Toshiba's RN series of built-in bias resistor transistors designed specifically for automotive use. The RN2906 variant provides a point-symmetrical dual PNP configuration, offering a compact alternative to discrete transistor networks. It is part of a broader family including NPN variants and different resistor combinations tailored for various interface and switching needs.
Direct substitutes must match the dual PNP configuration, US-6 package, and -50V/-0.1A ratings. Verify equivalent AEC-Q101 certification if automotive qualification is mandatory. Compare internal resistor values (R1/R2) to ensure compatibility with existing biasing networks.