RN2906(T5L,F,T)

RN2906(T5L,F,T)

$0.29
  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-

SKU:b4810a0ed803 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN2906(T5L,F,T)

Overview

The RN2906(T5L,F,T) is a dual PNP digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two pre-biased transistors within a compact US6 (SOT-363) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA per element. Internal biasing resistors are configured with R1 at 4.7kΩ and R2 at 47kΩ, yielding a typical resistance ratio of 0.1. Key electrical specifications include a minimum DC current gain (hFE) of 80 at 10mA/5V, a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current, and a transition frequency of 200MHz. The component supports a maximum power dissipation of 200mW and operates up to +150°C junction temperature.

Feature Summary

  • Dual PNP configuration with integrated base and emitter biasing resistors for simplified circuit design
  • Automotive-grade qualification compliant with AEC-Q101 standards for enhanced reliability
  • Compact US6 surface-mount packaging optimized for high-density PCB layouts

Applications

  • Switching circuits in automotive electronic control units
  • Inverter driver circuits requiring isolated or buffered drive signals
  • Interface connection buffers between logic levels
  • General-purpose driver circuits for low-power loads

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and binning details. Ensure compatibility with AEC-Q101 requirements if deploying in automotive environments. Cross-reference the manufacturer part number with distributor codes to avoid ordering errors due to similar family members like RN2905 or RN2906 without suffixes.

Selection Notes

Select this component when a dual PNP digital transistor with a 4.7kΩ base resistor is required. The 4.7kΩ value provides a specific drive current characteristic distinct from the 2.2kΩ variant found in the RN2905 series. Consider the 200MHz transition frequency for applications requiring faster switching speeds compared to standard discrete transistors. Verify that the 50V VCEO rating meets the system's voltage headroom requirements.

Part Context

This part belongs to the Toshiba RN29xx series of built-in bias resistor transistors. The RN2906 specifically denotes the PNP polarity variant with a 4.7kΩ input resistor. It shares the same physical footprint and pinout as other devices in the RN2901-RN2906 family, allowing for potential board-level substitution if electrical parameters such as hFE and resistor values align with design constraints.

Replacement Considerations

RN2906,LXHF(CT is an automotive-qualified alternative within the same product line offering identical electrical characteristics and packaging.

RN2906(T5L,F,T)RN2906(T5L,F,T)
$0.29
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