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The RN2907FE,LF(CT is a pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors within a compact US6 surface-mount package. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Internal resistor values are typically 47 kΩ for the base resistor (R1) and 4.7 kΩ for the emitter resistor (R2). The component supports a transition frequency (fT) of 200 MHz and has a maximum power dissipation (Pd) of 200 mW. It is designed for high-speed switching applications in low-voltage circuits.
Verify the specific suffix LF(CT against the manufacturer's datasheet to confirm lead-free status and tape-and-reel packaging configuration. Ensure compatibility with RoHS directives if required by the target market. Cross-reference the ES6 or US6 package designation with the schematic footprint to prevent assembly errors during procurement.
Select this component when a dual PNP configuration with integrated biasing is required for signal inversion or level shifting. The 47k/4.7k resistor ratio provides a standard gain characteristic suitable for logic interface applications. Verify that the -50V rating meets the system voltage requirements and that the 200mA peak current capability exceeds the load demands.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors to reduce component count and board space. The RN2907 variant specifically utilizes PNP technology, complementing NPN variants like the RN2906 for complementary push-pull configurations in audio or motor drive interfaces.
Publicly confirmed substitute part numbers for RN2907FE,LF(CT were not identified in the provided source material. Engineers should consult official Toshiba documentation or authorized distributor cross-reference tools for verified equivalents.