RN2907,LF(CT

Overview

The RN2907,LF(CT is a dual pre-biased NPN digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal biasing resistors in a compact US6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 100mA per element. The device features a typical transition frequency (fT) of 200MHz and a maximum power dissipation of 200mW. Internal resistor values are typically 4.7kΩ for the base resistor (R1) and 47kΩ for the emitter resistor (R2). The component complies with RoHS3 standards and has a moisture sensitivity level of 1.

Feature Summary

• Integrates two NPN bipolar junction transistors with built-in biasing resistors to simplify circuit design and reduce board space.
• Provides high-speed switching capabilities with a transition frequency of 200MHz suitable for digital logic applications.
• Utilizes a compact US6 (SOT-363) surface-mount package for efficient PCB layout in portable and dense electronic devices.

Applications

• Digital logic interface circuits between microcontrollers and peripheral devices.
• Switching applications in portable consumer electronics and mobile phones.
• General-purpose amplification and switching in industrial control systems.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and variant selection. Confirm that the requested part number matches the exact electrical characteristics and pinout configuration required for the target application. Cross-reference the manufacturer part number with distributor identifiers to avoid substitution errors during procurement.

Selection Notes

Select this component when a dual NPN pre-biased transistor solution is required in a small form factor. Ensure the circuit design operates within the 50V collector-emitter voltage and 100mA collector current limits. Verify that the internal resistor values of 4.7kΩ and 47kΩ align with the driving source requirements and desired switching speeds for the specific application context.

Part Context

The RN2907 belongs to Toshiba's RN series of digital transistors, which combine bipolar transistors with integrated biasing networks. This series is designed to replace multiple discrete components, reducing assembly complexity and improving reliability in modern electronic designs. The RN2907 specifically offers a dual NPN configuration optimized for space-constrained applications requiring reliable switching performance.

Replacement Considerations

Consult the official Toshiba RN2901-06 datasheet for verified compatible substitutes within the same product family. Ensure any replacement maintains identical pinout, voltage ratings, and current capabilities to guarantee functional equivalence without circuit modification.