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The RN2907(T5L,F,T) is a dual PNP pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in biasing resistors in a compact surface-mount US6 package (equivalent to SC-88 or SOT-363). The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA per element. Key electrical specifications include a DC current gain (hFE) of at least 80 at 10mA and 5V, with a saturation voltage of 300mV max at 250µA base current and 5mA collector current. The unit operates within a frequency range up to 200MHz and dissipates up to 200mW of power.
Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and binning details. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the US6 package dimensions with your PCB footprint library to prevent assembly errors during surface-mount placement.
Select this component when a dual PNP pre-biased solution is needed to reduce external resistor count and board space. Compare the 50V rating and 100mA current limit against circuit requirements. Consider the US6 package size relative to available real estate. Verify thermal dissipation limits under expected operating conditions to ensure reliability within the specified temperature range.
This part belongs to the RN29xx series of pre-biased transistor arrays from Toshiba. These devices are designed to replace discrete resistor-transistor combinations, offering improved consistency and reduced assembly time. The RN2907 specifically provides a dual PNP configuration, contrasting with NPN variants like the RN2904 or single-unit versions in the same family.
Check for direct equivalents such as the RN2907LF(CT) which shares the core electrical specifications but may differ in packaging quantity or reel type. Verify pinout compatibility before substitution to avoid circuit damage.