RN2907(T5L,F,T)

RN2907(T5L,F,T)

$0.29
  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-

SKU:963c02bda6f9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN2907(T5L,F,T)

Overview

The RN2907(T5L,F,T) is a dual PNP pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in biasing resistors in a compact surface-mount US6 package (equivalent to SC-88 or SOT-363). The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA per element. Key electrical specifications include a DC current gain (hFE) of at least 80 at 10mA and 5V, with a saturation voltage of 300mV max at 250µA base current and 5mA collector current. The unit operates within a frequency range up to 200MHz and dissipates up to 200mW of power.

Feature Summary

  • Integrated dual PNP configuration with embedded biasing resistors for simplified circuit design
  • Compact surface-mount packaging suitable for high-density board layouts
  • High-speed switching capability with transition frequency up to 200MHz
  • Low saturation voltage characteristics for efficient power handling

Applications

  • General-purpose switching circuits requiring dual PNP logic interfaces
  • Driver stages for small-signal amplification applications
  • Logic level translation between different voltage domains

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and binning details. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the US6 package dimensions with your PCB footprint library to prevent assembly errors during surface-mount placement.

Selection Notes

Select this component when a dual PNP pre-biased solution is needed to reduce external resistor count and board space. Compare the 50V rating and 100mA current limit against circuit requirements. Consider the US6 package size relative to available real estate. Verify thermal dissipation limits under expected operating conditions to ensure reliability within the specified temperature range.

Part Context

This part belongs to the RN29xx series of pre-biased transistor arrays from Toshiba. These devices are designed to replace discrete resistor-transistor combinations, offering improved consistency and reduced assembly time. The RN2907 specifically provides a dual PNP configuration, contrasting with NPN variants like the RN2904 or single-unit versions in the same family.

Replacement Considerations

Check for direct equivalents such as the RN2907LF(CT) which shares the core electrical specifications but may differ in packaging quantity or reel type. Verify pinout compatibility before substitution to avoid circuit damage.

RN2907(T5L,F,T)RN2907(T5L,F,T)
$0.29
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