RN2908FE,LXHF(CT

Overview

The RN2908FE,LXHF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES6 surface-mount package, designed for compact circuit layouts. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA per element. Internal resistor values are typically 47kΩ for the base (R1) and 47kΩ for the emitter (R2). Key electrical characteristics include a DC current gain (hFE) minimum of 80 at 10mA/5V and a saturation voltage of 300mV max at 250µA base current and 5mA collector current. The transition frequency is rated at 200MHz with a maximum power dissipation of 100mW.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to simplify driver circuit design.
• Optimized for high-speed switching applications with a 200MHz transition frequency rating.
• Utilizes a compact ES6 surface-mount package to minimize printed circuit board area.

Applications

• Interface circuits for logic level translation
• Driver stages for small-signal switching loads
• Digital buffer implementations in consumer electronics

Procurement Notes

Verify the specific suffix LXHF against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and moisture sensitivity levels. Ensure the ordering code matches the exact resistance tolerance and hFE binning requirements for the target application. Cross-reference the ES6 package dimensions with PCB footprint libraries prior to procurement.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. Compare the 100mA current limit and 50V voltage rating against load requirements. Consider the 100mW power dissipation limit and thermal management needs within the ES6 package for high-frequency switching environments.

Part Context

This part belongs to the RN29xx series of pre-biased transistors from Toshiba, which are engineered to replace discrete resistor-transistor networks. The FE variant denotes a specific packaging and taping format within the broader RN2908 family. These devices are commonly used to streamline designs in portable devices and automotive electronics where space efficiency is critical.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased arrays such as the RN1908 or equivalent parts from manufacturers like Onsemi or ROHM, provided they match the ES6 package, 50V rating, and 47kΩ/47kΩ resistor configuration. Verify pinout compatibility before substitution.