SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2908FE(TE85L,F) is a dual PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact SMD package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 200 mW. The device features a minimum DC current gain (hFE) of 80 and operates within a temperature range of -55°C to +150°C. The typical input resistance is 4.7 kOhms with a resistor ratio of 1.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm lead-free compliance and tape-and-reel specifications. Ensure the ordering part number matches the exact pinout and internal resistor configuration required for your schematic. Cross-reference with authorized distributors to confirm current availability and authenticity.
Select this component when a dual PNP digital transistor with a 50V rating and 100mA current capacity is required. The built-in bias network eliminates external resistors, reducing board space and assembly steps. Verify that the 200mW power dissipation limit accommodates the expected load conditions and ambient temperature environment.
This component belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with on-chip biasing networks. The RN2908FE variant specifically provides dual PNP configurations in a small outline package, designed to replace multiple discrete components in switching and logic applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba's official replacement guide or distributor cross-reference tools for verified equivalents.