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The RN2908,LF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA per element. The device features a transition frequency (fT) of 250MHz and a maximum power dissipation of 300mW. Internal resistor values are specified as R1 = 22kΩ and R2 = 47kΩ. The component is housed in an SM6 (SC-74/SOT-457) package and complies with RoHS standards.
Verify the specific suffix configuration when ordering, as variations such as TE85L or LXHF may indicate different tape-and-reel specifications or automotive qualification statuses. Confirm that the standard commercial version meets all required environmental and regulatory standards for the intended deployment environment before finalizing procurement.
Select this component when a dual NPN configuration with fixed bias ratios is required. Ensure the 50V voltage rating and 100mA current capacity align with the load requirements. Consider the 300mW power dissipation limit and thermal management needs within the SM6 package footprint during the initial schematic capture phase.
This part belongs to the RN series of pre-biased transistor arrays from Toshiba. These devices combine transistors and resistors to reduce board space and assembly costs. The RN2908 specifically provides a dual NPN solution, contrasting with PNP-only or complementary NPN/PNP variants within the same product family.
Cross-reference with other dual NPN pre-biased arrays from manufacturers like Rohm or Nexperia. Verify pinout compatibility, resistor tolerance, and hFE characteristics to ensure functional equivalence without redesigning the surrounding passive components.