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The RN2908(T5L,F,T) is a dual PNP digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP bipolar junction transistors with built-in bias resistors in a compact surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 200MHz. The device features a DC current gain (hFE) of at least 80 at 10mA and 5V, with a saturation voltage of 300mV max at 250µA base current and 5mA collector current. Power dissipation is rated at 200mW.
Verify the specific suffix T5L against the manufacturer's official datasheet to confirm pinout and electrical tolerances. Ensure the component status is active as some variants may be obsolete. Confirm RoHS compliance and packaging type matches the project requirements before ordering.
Select this component when a dual PNP configuration with integrated biasing is required to reduce board space. Compare the 50V rating and 100mA current limit against load requirements. Consider the US6 or similar small outline package constraints for PCB layout density.
This part belongs to Toshiba's RN series of digital transistors, which combine BJTs with internal resistors. It serves as a drop-in replacement for discrete resistor-transistor networks, simplifying assembly and improving reliability in low-power switching applications.
Check for direct equivalents from other manufacturers offering identical pinouts and electrical characteristics. Verify that any substitute maintains the same PNP polarity and bias resistor ratios to ensure circuit compatibility.