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The RN2909FE(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors within an ES-6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical input resistance of 47 kOhms and a minimum DC current gain (hFE) of 70. It operates within a temperature range of -55°C to +150°C and supports a maximum operating frequency of 250 MHz.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm lead-free status and reel specifications. Confirm availability as distribution channels may list this part as obsolete or end-of-life. Ensure compatibility with RoHS directives if required by the target application environment.
Select this component when a dual NPN configuration with fixed bias is required. Compare the 47 kOhm input resistance against circuit requirements to ensure proper base drive. Verify that the 100 mA current rating and 100 mW power dissipation meet the thermal and load demands of the design.
This part belongs to the Toshiba RN series of bias resistor built-in transistors. These devices are designed to simplify circuit layouts by replacing discrete transistors and resistors. The ES-6 package variant offers a small footprint suitable for dense PCB assemblies compared to larger through-hole alternatives.
Check for direct equivalents such as the RN1909FE or RN2909 from other manufacturers. Verify pinout compatibility and electrical parameters like hFE and VCEO before substitution.