RN2909,LF(CT

RN2909,LF(CT

$0.19
  • Description:PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
  • Series:-

SKU:7f3b78e65c2d Category: Brand:

  
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Product Detailed Parameters

  • Description:PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN2909,LF(CT

Overview

The RN2909,LF(CT is a dual PNP digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two pre-biased transistors within a compact US6 (SOT-363) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of -50V and a continuous collector current of -100mA per element. The device features built-in bias resistors with typical values of 47kΩ for R1 and 22kΩ for R2. It operates with a minimum DC current gain (hFE) of 70 at specified test conditions and supports a transition frequency up to 250MHz. The component is rated for a maximum power dissipation of 200mW and complies with AEC-Q101 automotive standards.

Feature Summary

  • Dual PNP configuration with integrated bias resistors simplifies circuit design by reducing external component count.
  • AEC-Q101 qualification ensures reliability and suitability for demanding automotive electronic applications.
  • Compact US6 surface-mount package facilitates high-density PCB layout and automated assembly processes.

Applications

  • Automotive switching circuits requiring robust performance under varying environmental conditions.
  • Inverter control logic for motor drives and power management systems.
  • Interface circuits connecting microcontrollers to peripheral devices or sensors.
  • Driver circuits for low-power loads in industrial control panels.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Ensure that the requested variant matches the required RoHS directive and automotive qualification standards. Cross-reference the full part number with authorized distributor catalogs to confirm availability and lead times prior to finalizing procurement orders.

Selection Notes

Select this component when a dual PNP digital transistor solution is required for space-constrained designs. Verify that the built-in resistor values align with the target logic levels and drive requirements. Confirm that the -50V voltage rating and -100mA current capacity exceed the maximum operational stresses of the application circuit to ensure long-term reliability.

Part Context

This component belongs to the RN29xx series of digital transistors from Toshiba, designed for general-purpose switching and interface applications. The series offers various configurations and resistor combinations to suit different logic families and load requirements. The RN2909 specifically provides a dual PNP arrangement optimized for automotive and industrial environments.

Replacement Considerations

Consult the official Toshiba replacement guide for verified cross-references. Potential substitutes may include other dual PNP BRTs with matching voltage, current, and package specifications. Ensure any alternative component meets the same AEC-Q101 automotive qualification if used in vehicle electronics.

RN2909,LF(CTRN2909,LF(CT
$0.19
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