RN2910FE,LF(CT

RN2910FE,LF(CT

$0.19
  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-

SKU:800e42aaaf39 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN2910FE,LF(CT

Overview

The RN2910FE,LF(CT is a dual pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors within an ES6 (SOT-353) surface-mount package. The device features built-in bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a maximum power dissipation of 100 mW. The DC current gain (hFE) has a minimum value of 40 at -5 V and -1 mA. The transition frequency is rated at 200 MHz, and the base input resistance (R1) is typically 4.7 kΩ.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • Dual configuration with integrated bias resistors to reduce external component count
  • Complementary pairing available with the RN1910EF series

Applications

  • Switching circuits
  • Inverter circuits
  • Interfacing applications
  • Driver circuits

Procurement Notes

Verify that the specific ordering suffix matches the required packaging format and environmental compliance level. Confirm AEC-Q101 qualification status if the application requires automotive-grade components. Ensure the selected variant aligns with the intended use category defined in the manufacturer's documentation.

Selection Notes

Select this component when a compact dual PNP solution with integrated biasing is required. The ES6 package offers space efficiency for dense layouts. Verify that the -50 V rating and -100 mA current capacity meet the specific load requirements of the target switching or driver application.

Part Context

This part belongs to the RN29xx series of silicon PNP epitaxial type bias resistor built-in transistors. It utilizes the PCT process technology. The FE suffix indicates a specific resistor ratio configuration within the dual array family, distinct from standard RN2910 variants.

Replacement Considerations

The RN1910EF series serves as a complementary NPN replacement option. Direct substitution requires verifying pin compatibility and ensuring the opposite polarity meets the circuit logic requirements.

RN2910FE,LF(CTRN2910FE,LF(CT
$0.19
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