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The RN2910FE,LF(CT is a dual pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors within an ES6 (SOT-353) surface-mount package. The device features built-in bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a maximum power dissipation of 100 mW. The DC current gain (hFE) has a minimum value of 40 at -5 V and -1 mA. The transition frequency is rated at 200 MHz, and the base input resistance (R1) is typically 4.7 kΩ.
Verify that the specific ordering suffix matches the required packaging format and environmental compliance level. Confirm AEC-Q101 qualification status if the application requires automotive-grade components. Ensure the selected variant aligns with the intended use category defined in the manufacturer's documentation.
Select this component when a compact dual PNP solution with integrated biasing is required. The ES6 package offers space efficiency for dense layouts. Verify that the -50 V rating and -100 mA current capacity meet the specific load requirements of the target switching or driver application.
This part belongs to the RN29xx series of silicon PNP epitaxial type bias resistor built-in transistors. It utilizes the PCT process technology. The FE suffix indicates a specific resistor ratio configuration within the dual array family, distinct from standard RN2910 variants.
The RN1910EF series serves as a complementary NPN replacement option. Direct substitution requires verifying pin compatibility and ensuring the opposite polarity meets the circuit logic requirements.