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The RN2910FE,LXHF(CT is a dual PNP bias resistor built-in transistor (BRT) from Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal base resistors in an ES6 package. Key electrical parameters include a collector-emitter voltage of -50V, a continuous collector current of -100mA, and a power dissipation of 100mW. The device features a minimum DC current gain (hFE) of 120 at IC = -1mA and VCE = -5V, with a transition frequency of 200MHz. The typical input resistance (R1) is 4.7kΩ.
Verify the specific ordering suffix to confirm the package type and intended use category. The LXHF suffix indicates a specific packaging configuration. Confirm RoHS compliance status and ensure the part meets the required AEC-Q101 qualification if used in automotive contexts. Cross-reference the datasheet revision date to ensure the latest specifications are applied during design validation.
Select this component when a compact dual PNP solution with built-in biasing is required. The integrated resistors simplify circuit design by eliminating external base resistors. Ensure the operating voltage does not exceed the -50V collector-emitter rating. Consider the 100mA current limit and 100mW power dissipation constraints for thermal management in the final application layout.
This part belongs to the RN2910/RN2911 series of silicon PNP epitaxial type BRTs utilizing Toshiba's PCT process. It serves as a complementary counterpart to the NPN RN1910EF to RN1911EF series. The product line supports general use, unintended use restrictions, and specific automotive applications depending on the ordering suffix.
Direct substitutes within the same family include RN2911FE variants for NPN/PNP pairing or other RN29xx series parts. Verify pin compatibility and electrical ratings before substitution. The RN2910FE is specifically designed to complement the RN1910EF series.