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The RN2910,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal bias resistors are configured with a base resistance (R1) of 10 kΩ and an emitter resistance (R2) of 47 kΩ for both transistors. The component operates with a transition frequency of 200MHz and dissipates up to 100mW of power. It is housed in the ES6 (SOT-563) package and complies with RoHS3 standards.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Ensure the component matches the required pinout configuration for the target PCB footprint. Cross-reference the datasheet electrical limits with the application environment to prevent overstress conditions during operation.
Select this component when a compact solution for complementary switching is required. The integrated bias network reduces external component count compared to discrete resistor-transistor combinations. Verify that the 100mA current rating and 50V voltage breakdown meet the specific load requirements of the intended switching application.
This part belongs to the RN series of pre-biased BJT arrays from Toshiba. These components are designed to replace multiple discrete devices, saving board space and assembly time. The RN2910 specifically combines NPN and PNP elements, distinguishing it from single-polarity variants like the RN290x or RN25xx series.
Consult official substitution lists for verified equivalents. Potential alternatives may include other dual pre-biased arrays with matching R1/R2 values and compatible SOT-563 footprints. Verify pin compatibility before replacement to ensure direct interchangeability without schematic modification.