RN2911FE,LXHF(CT

RN2911FE,LXHF(CT

$0.34
  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-

SKU:7f882cd13489 Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN2911FE,LXHF(CT

Overview

The RN2911FE,LXHF(CT is a dual pre-biased NPN digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES6 surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 50V, a maximum continuous collector current (IC) of 100mA, and a transition frequency (fT) of 250MHz. The device features a typical power dissipation of 100mW and includes base resistor R1 and emitter resistor R2 values of 4.7kΩ each. It meets AEC-Q101 automotive grade standards.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
  • Automotive-grade reliability compliant with AEC-Q101 standards
  • Compact ES6 surface-mount package for space-constrained applications

Applications

  • Switching circuits in automotive electronic control units
  • Interface circuits between microcontrollers and peripheral devices
  • Driver circuits for low-power loads in industrial systems

Procurement Notes

Verify the complete part number including the suffix FE,LXHF(CT to ensure correct packaging and resistance values. Confirm AEC-Q101 qualification status if required for automotive assembly. Check manufacturer datasheets for specific thermal derating curves and recommended soldering profiles for the ES6 package to ensure reliable mounting during production.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. Ensure the 50V VCEO rating exceeds the maximum circuit voltage. Verify that the 100mA IC limit accommodates the load current. Compare the 4.7kΩ internal resistor values against external biasing requirements to determine if this integrated solution reduces bill-of-materials complexity compared to discrete components.

Part Context

This part belongs to the RN29xx series of pre-biased transistor arrays from Toshiba. It shares the same core transistor structure as the RN2911FS but differs in packaging and specific resistor tolerances. The ES6 package variant is designed for automated surface-mount assembly, offering a smaller footprint than through-hole alternatives while maintaining similar electrical performance characteristics for general-purpose switching applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult Toshiba's official cross-reference documentation or contact technical support directly for verified equivalent components that match the ES6 package and AEC-Q101 automotive qualification requirements.

RN2911FE,LXHF(CTRN2911FE,LXHF(CT
$0.34
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