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The RN2911FE(TE85L,F) is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors in an ES6 surface-mount package. The device features a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation rating of 100 mW. It includes a typical input resistance of 10 kΩ for the RN2911FE configuration. The component operates within a junction temperature range of -55°C to +150°C and supports a transition frequency of 200 MHz.
Verify the specific ordering suffix against the manufacturer's official part number list to confirm AEC-Q101 qualification status. Ensure the selected variant matches the intended application category, as general use and automotive versions share identical electrical characteristics but differ in reliability specifications. Confirm RoHS compliance requirements prior to procurement.
Select this component when a dual PNP digital transistor with integrated biasing is required for space-constrained designs. The RN2911FE serves as the complementary counterpart to the RN1911EF NPN series. Verify that the 10 kΩ input resistance aligns with the driving circuit's logic levels and current capabilities before finalizing the design.
This component belongs to the RN29xxFE series of silicon PNP epitaxial type bipolar transistors utilizing Toshiba's PCT process. The series is designed to replace discrete resistor-transistor combinations, offering a compact solution for digital switching and signal processing tasks in consumer and industrial electronics.
The RN1911EF is documented as the complementary NPN equivalent within the same product family. Cross-referencing with other manufacturers requires verifying matching pinouts, saturation voltages, and transition frequencies.