RN2911,LF

Overview

The RN2911,LF is a pre-biased PNP transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial type silicon transistor with built-in bias resistors in an SSM (SOT-416) surface-mount package. The device supports a maximum collector current of 50 mA and a collector-emitter voltage of 20 V. Key electrical parameters include a minimum DC current gain (hFE) of 300 at 10 mA and 5 V, and a maximum collector cutoff current of 500 nA. The transition frequency is rated at 200 MHz, with a maximum power dissipation of 50 mW.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors to simplify circuit design
• Reduces component count and manufacturing complexity compared to discrete resistor configurations
• Designed for high-speed switching applications with a 200 MHz transition frequency

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the supplier provides valid traceability documents matching the manufacturer part number RN2911,LF.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required for low-power switching or interface tasks. The 20 V rating suits low-voltage logic interfaces. Compare the 50 mA current limit and 50 mW power dissipation against load requirements. Verify that the SSM package footprint matches the PCB layout constraints.

Part Context

This component belongs to Toshiba's RN series of bias resistor built-in transistors. These devices are designed to replace discrete transistor-resistor networks, offering space savings and improved consistency. The RN2911 specifically addresses PNP requirements within this lineup, complementing NPN variants like the RN1xxx series for complementary designs.

FAQ

What is the configuration of the internal resistors?

The datasheet specifies the device as having built-in bias resistors but does not explicitly list the resistance values in the provided summary data.

Is this device suitable for high-frequency applications?

Yes, it features a transition frequency of 200 MHz, making it appropriate for standard switching and interface frequencies.

What is the maximum power dissipation?

The maximum power dissipation is 50 mW.