RN2911(T5L,F,T)

Overview

The RN2911(T5L,F,T) is a dual PNP pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP bipolar junction transistors with built-in bias resistors in a compact surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA per element. Internal resistance values include a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 47 kΩ. The component operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 200mW.

Feature Summary

• Dual PNP configuration with integrated bias resistors for simplified circuit design
• High DC current gain characteristics suitable for switching applications
• Compact US6 surface-mount package for space-constrained layouts

Applications

• Switching circuits requiring compact dual-transistor solutions
• Inverter circuits for signal processing
• Interface and driver circuits in consumer electronics

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and lead-free composition. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement, as suffix variations may impact environmental certifications and supply chain availability.

Selection Notes

Select this component when a dual PNP pre-biased transistor is required for high-speed switching or logic interface applications. Ensure the 50V Vceo rating and 100mA Ic limits align with the target circuit requirements. Verify that the internal 47kΩ/47kΩ resistor network matches the desired drive conditions compared to alternative bias configurations.

Part Context

This part belongs to the RN29xx series of pre-biased transistors from Toshiba Semiconductor and Storage. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The series is commonly utilized in digital logic interfaces and small-signal switching applications where consistent biasing is critical for performance stability.

Replacement Considerations

Consult official Toshiba cross-reference documents for verified substitutes. Generic equivalents may differ in hFE linearity or internal resistance tolerances. Validate pinout compatibility and thermal characteristics before substituting.