RN2962FE(TE85L,F)

RN2962FE(TE85L,F)

$0.29
  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-

SKU:d86cd16ef8d6 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

Download product information

RN2962FE(TE85L,F)

Overview

RN2962FE(TE85L,F) is a dual pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package, specifically the ES6 configuration. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. With a typical DC current gain (hFE) minimum of 80 and a power dissipation rating of 100mW, it is designed for efficient switching applications. The component operates within a standard temperature range and features a typical input resistance of 4.7 kOhms per channel.

Feature Summary

  • Dual NPN configuration with integrated bias resistors for simplified circuit design
  • Compact surface-mount packaging suitable for space-constrained layouts
  • High switching speed capability with defined frequency characteristics

Applications

  • General-purpose signal switching circuits
  • Driver stages for low-power loads
  • Logic interface and level shifting applications

Procurement Notes

Verify the exact ordering part number against the manufacturer's official documentation to ensure correct suffix alignment. Confirm that the ES6 package variant matches the required footprint for PCB layout. Cross-reference the specific TE85L tape-and-reel specification if automated assembly is planned. Ensure compliance with RoHS3 standards as indicated in official product listings before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN switch with fixed biasing is required to reduce external component count. The 50V rating suits low-voltage digital logic systems. Consider the 100mA current limit for load driving capabilities. The integrated resistor values simplify base drive calculations compared to discrete transistor pairs. Evaluate thermal constraints given the 100mW power dissipation limit in dense assemblies.

Part Context

The RN2962FE belongs to Toshiba's series of pre-biased bipolar transistors designed for replacing multiple discrete components. These devices combine transistors and resistors to minimize board space and assembly costs. The FE suffix typically denotes a specific packaging or taping configuration. This family targets consumer electronics and industrial control panels requiring reliable, compact switching solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

RN2962FE(TE85L,F)RN2962FE(TE85L,F)
$0.29
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