RN2962(TE85L,F)

Overview

The RN2962(TE85L,F) is a pre-biased dual PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in a compact surface-mount package. The device supports a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a power dissipation of 200mW. It features a transition frequency of 200MHz and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual PNP configuration with integrated bias resistors for simplified circuit design
• High-speed switching capability with a transition frequency of 200MHz
• Robust thermal performance supporting operation up to 150°C

Applications

• General-purpose switching circuits
• Logic interface applications
• Signal level shifting

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm package type and environmental compliance. Ensure the component matches the required dual PNP specification and electrical ratings for the target application before procurement.

Selection Notes

Select this component when a dual PNP digital transistor with integrated biasing is required. Consider the 50V voltage rating and 100mA current limit to ensure compatibility with load requirements. Verify that the US6 package fits the PCB layout constraints.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. These devices are designed to reduce external component count and simplify board space in digital logic and switching applications.

Replacement Considerations

Public sources indicate this product is no longer manufactured. Official substitutes should be identified through Toshiba's replacement program or equivalent dual PNP pre-biased transistors with matching 50V/100mA ratings and US6 packaging.