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The RN2967FE(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors with internal bias resistors into an Extreme-Super-Mini 6-pin package. The device features a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 100 mW. Internal resistance values are R1 = 10 kΩ and R2 = 47 kΩ. Electrical characteristics include a DC current gain (hFE) minimum of 70 at IC = -10 mA, a transition frequency of 200 MHz, and an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix TE85L,F against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape dimensions. Ensure that the requested part number matches the exact electrical ratings required for the target application design before finalizing procurement orders.
Select this component when a dual PNP configuration with fixed bias ratios is required for space-constrained designs. The RN2967FE offers a specific resistor ratio of approximately 0.213, distinguishing it from other variants like the RN2968FE or RN2969FE. Verify that the input impedance requirements align with the internal 10 kΩ base resistor value.
This component belongs to the RN2967FE~RN2969FE series of Silicon PNP Epitaxial Type transistors utilizing Toshiba's PCT Process. These devices are designed to replace discrete transistor and resistor combinations, facilitating the miniaturization of electronic equipment while lowering assembly costs through reduced parts count.
The RN2968FE and RN2969FE are direct functional equivalents within the same series but feature different internal bias resistor values. Substitution requires verifying that the alternative resistor ratios meet the specific drive and logic level requirements of the circuit design.