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The RN2967(TE85L,F) is a dual PNP bias resistor built-in transistor from Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an Extreme-Super-Mini 6-pin package. The device features a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 100 mW. For the RN2967FE variant, the input resistor R1 is nominally 10 kΩ and the emitter resistor R2 is nominally 47 kΩ. The transition frequency is typically 200 MHz, and it operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. Confirm that the TE85L designation matches the required reel specifications for automated assembly processes before finalizing procurement orders.
Select this component when a dual PNP configuration with integrated biasing is required to minimize board space. Ensure the design accommodates the specified -50 V collector-emitter voltage and 100 mA current limits. Verify that the 10 kΩ input resistor value aligns with the driving source impedance requirements.
This part belongs to the RN2967FE through RN2969FE family of PNP bias resistor built-in transistors. These devices utilize Toshiba's Silicon PNP Epitaxial Type (PCT Process). They are functionally complementary to the RN1967FE to RN1969FE NPN series, allowing for matched pairs in digital logic designs.
Direct substitutes include other dual PNP pre-biased transistors in SOT-363 or similar 6-pin packages. Verify pinout compatibility and electrical parameters such as hFE and saturation voltage against the RN2967FE datasheet specifications before substitution.