RN2969FE(TE85L,F)

RN2969FE(TE85L,F)

  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-

SKU:bf4e474c632d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN2969FE(TE85L,F)

Overview

The RN2969FE(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors (R1=47 kΩ, R2=22 kΩ) into an Extreme-Super-Mini 6-pin package. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 100 mW. The device features a DC current gain (hFE) of 70 at -10 mA and a transition frequency of 200 MHz.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors to reduce component count
  • Designed for compact equipment manufacturing through reduced assembly requirements
  • Operates as a complementary device to the NPN RN1967FE to RN1969FE series

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details. Ensure compliance with RoHS directives and export regulations before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to maintain product reliability under operational stress.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. The RN2969FE offers a specific resistor ratio of approximately 2.14, distinguishing it from the RN2967FE and RN2968FE variants. Verify that the -50 V voltage rating and 100 mA current capacity meet the circuit requirements.

Part Context

This part belongs to the RN2967FE~RN2969FE family of Silicon PNP Epitaxial Type transistors utilizing the PCT Process. These devices are designed to replace discrete transistor and resistor combinations in digital logic and interface applications, offering a standardized solution for signal inversion and driving tasks in portable electronics.

Replacement Considerations

The RN2969FE is electrically complementary to the RN1969FE. For direct substitution within the same package footprint and functionality, verify compatibility with other RN19xx/RN29xx series members or consult manufacturer cross-reference data.

RN2969FE(TE85L,F)RN2969FE(TE85L,F)

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