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The RN2969FE(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors (R1=47 kΩ, R2=22 kΩ) into an Extreme-Super-Mini 6-pin package. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 100 mW. The device features a DC current gain (hFE) of 70 at -10 mA and a transition frequency of 200 MHz.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details. Ensure compliance with RoHS directives and export regulations before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to maintain product reliability under operational stress.
Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. The RN2969FE offers a specific resistor ratio of approximately 2.14, distinguishing it from the RN2967FE and RN2968FE variants. Verify that the -50 V voltage rating and 100 mA current capacity meet the circuit requirements.
This part belongs to the RN2967FE~RN2969FE family of Silicon PNP Epitaxial Type transistors utilizing the PCT Process. These devices are designed to replace discrete transistor and resistor combinations in digital logic and interface applications, offering a standardized solution for signal inversion and driving tasks in portable electronics.
The RN2969FE is electrically complementary to the RN1969FE. For direct substitution within the same package footprint and functionality, verify compatibility with other RN19xx/RN29xx series members or consult manufacturer cross-reference data.