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The RN2969(TE85L,F) is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an Extreme-Super-Mini 6-pin package. The device features a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 100 mW. Internal resistors are configured as R1 = 47 kΩ and R2 = 22 kΩ. It operates within a junction temperature range of -55°C to 150°C and includes a transition frequency of 200 MHz.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure design reliability aligns with the Toshiba Semiconductor Reliability Handbook regarding derating concepts.
Select this component when space constraints require integrating bias resistors directly with PNP transistors. The RN2969FE variant provides specific resistance values of 47 kΩ and 22 kΩ suitable for standard logic interfacing. Verify that the required collector-emitter voltage and current ratings meet the application demands without exceeding absolute maximum limits.
This part belongs to the RN2967FE to RN2969FE series of silicon PNP epitaxial type BRTs. These devices utilize Toshiba's PCT process technology. The RN2969FE is electrically complementary to the NPN RN1969FE series. All variants share the same physical package dimensions and pinout configuration while differing only in internal resistor ratios.
Direct substitutes include other dual PNP BRTs with matching -50V ratings and similar resistor configurations. Verify pin compatibility and thermal characteristics carefully. No specific equivalent part numbers are confirmed in the provided source material.