RN2969(TE85L,F)

RN2969(TE85L,F)

$0.32
  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-

SKU:57bd910bf8e0 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

Download product information

RN2969(TE85L,F)

Overview

The RN2969(TE85L,F) is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an Extreme-Super-Mini 6-pin package. The device features a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 100 mW. Internal resistors are configured as R1 = 47 kΩ and R2 = 22 kΩ. It operates within a junction temperature range of -55°C to 150°C and includes a transition frequency of 200 MHz.

Feature Summary

  • Dual PNP transistors integrated into a single compact 6-pin package
  • Built-in bias resistors reduce external component count and assembly costs
  • Designed for switching, inverter, interface, and driver circuit applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure design reliability aligns with the Toshiba Semiconductor Reliability Handbook regarding derating concepts.

Selection Notes

Select this component when space constraints require integrating bias resistors directly with PNP transistors. The RN2969FE variant provides specific resistance values of 47 kΩ and 22 kΩ suitable for standard logic interfacing. Verify that the required collector-emitter voltage and current ratings meet the application demands without exceeding absolute maximum limits.

Part Context

This part belongs to the RN2967FE to RN2969FE series of silicon PNP epitaxial type BRTs. These devices utilize Toshiba's PCT process technology. The RN2969FE is electrically complementary to the NPN RN1969FE series. All variants share the same physical package dimensions and pinout configuration while differing only in internal resistor ratios.

Replacement Considerations

Direct substitutes include other dual PNP BRTs with matching -50V ratings and similar resistor configurations. Verify pin compatibility and thermal characteristics carefully. No specific equivalent part numbers are confirmed in the provided source material.

RN2969(TE85L,F)RN2969(TE85L,F)
$0.32
Buy Now