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The RN2971(TE85L,F) is a dual PNP bias resistor built-in transistor (BRT) from Toshiba Semiconductor and Storage, housed in a US6 package. It integrates two PNP transistors with internal bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 200 mW. The device features a typical DC current gain of 120 at -1 mA and a transition frequency of 200 MHz. The input resistor value for the RN2971 variant is typically 10 kΩ.
Verify the specific part number suffix against official Toshiba documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and environmental regulations relevant to the target market. Confirm that the operating conditions remain within the absolute maximum ratings to maintain reliability standards defined by the manufacturer.
Select the RN2971 when a dual PNP configuration with integrated biasing is required for space-constrained designs. Compare the 10 kΩ input resistor value against circuit requirements to ensure proper base drive characteristics. Consider the US6 package dimensions and thermal dissipation limits relative to the expected load current and ambient temperature conditions.
This component belongs to Toshiba's BRT series, which consolidates discrete transistors and bias resistors into single packages. The RN2971 serves as a complementary device to the NPN RN1971, offering matched performance for push-pull or differential configurations. The US6 package provides an ultra-small footprint suitable for modern portable electronics.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative BRTs based on pinout, voltage ratings, and resistor values before substitution.