SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN4601(TE85L,F) is a dual silicon NPN/PNP epitaxial transistor with built-in bias resistors, housed in an SM6 package. It integrates one NPN (Q1) and one PNP (Q2) device. Q1 supports a collector-emitter voltage of -50 V and continuous current of -100 mA, while Q2 supports 50 V and 100 mA. Both transistors share a total power dissipation rating of 300 mW at 25°C. The typical transition frequency is 200 MHz for Q1 and 250 MHz for Q2. Internal bias resistors R1 and R2 are both typically 4.7 kΩ.
Verify the specific ordering suffix TE85L against the manufacturer's current documentation to confirm packaging details such as reel size or tape specifications. Confirm RoHS compliance status directly with the supplier or official datasheet before procurement. Ensure the SM6 package dimensions align with the target PCB footprint requirements.
Select this component when a complementary NPN and PNP pair is required within a compact form factor. The integrated 4.7 kΩ resistors suit standard logic interface applications. Verify that the 300 mW total power dissipation meets the thermal requirements of the specific application environment.
This component belongs to Toshiba's line of pre-biased digital transistors. The SM6 package provides a super mini type footprint with six leads, designed to facilitate equipment miniaturization. It serves as a direct replacement for discrete resistor-transistor networks in space-constrained designs.
Check for equivalent dual BJT arrays from other manufacturers if sourcing constraints exist. Ensure any substitute maintains the same pinout configuration and electrical ratings for VCEO and IC to guarantee compatibility without circuit redesign.