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The RN4602TE85LF is a dual bias resistor built-in transistor (BRT) from Toshiba, integrating one PNP and one NPN epitaxial silicon device in an SM6 package. It features built-in bias resistors of 10 kΩ each with a ratio of 1:1. The PNP section supports a collector-emitter voltage of -50 V and continuous current of -100 mA, while the NPN section handles +50 V and +100 mA. Both transistors share a total power dissipation rating of 300 mW at 25°C. Transition frequencies are specified at 200 MHz for the PNP and 250 MHz for the NPN.
Verify the specific ordering suffix TE85LF against the manufacturer's latest documentation to confirm packaging details such as reel size or tape width. Ensure compliance with environmental directives like RoHS by checking the product's official status. Confirm that the intended application does not fall under restricted categories defined in the datasheet restrictions.
Select this component when a complementary pair of low-voltage, medium-current digital transistors is required. The 10 kΩ internal resistance is suitable for standard logic interfacing. Verify that the operating conditions remain within the absolute maximum ratings, particularly regarding the shared 300 mW power dissipation limit for both devices.
This part belongs to the RN4602 series of Toshiba's Bias Resistor Built-in Transistors. It utilizes the PCT process for epitaxial silicon construction. The SM6 package provides a super mini form factor with six leads, designed to minimize board space while maintaining electrical performance for general-purpose switching tasks.
Consult Toshiba's official cross-reference data for verified substitutes. Ensure any replacement maintains the same polarity configuration (PNP/NPN), voltage/current ratings, and package type to guarantee mechanical and electrical compatibility.