SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN4603(TE85L,F) is a silicon NPN/PNP epitaxial type transistor with built-in bias resistors, utilizing Toshiba's PCT process. It integrates two devices in an SM6 (SOT-457) surface-mount package. The unit includes one NPN transistor (Q1) and one PNP transistor (Q2). Each transistor features a typical base input resistance of 22 kΩ. The maximum collector-emitter voltage is ±50 V, and the continuous collector current is ±100 mA. The total power dissipation is rated at 300 mW. Transition frequencies are specified at 200 MHz for Q1 and 250 MHz for Q2.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel size or tape specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the SM6 package dimensions align with your PCB footprint requirements.
Select this component when a complementary pair of pre-biased transistors is required for space-constrained designs. The 22 kΩ internal resistors suit standard logic interface applications. Verify that the ±50 V voltage rating and ±100 mA current capacity meet the load requirements of the target switching or driver application.
The RN4603 belongs to Toshiba's series of digital transistors with built-in bias resistors. These components are designed to replace discrete resistor-transistor networks, offering miniaturization benefits. The SM6 package provides a small footprint suitable for dense surface-mount assemblies.
Check for direct equivalents from other manufacturers offering dual NPN/PNP configurations in SOT-457 packages with similar 22 kΩ bias resistors. Ensure transition frequency and saturation voltage parameters match the original design requirements.