RN4604(TE85L,F)

Overview

The RN4604(TE85L,F) is a dual digital transistor containing one NPN and one PNP epitaxial silicon device in an SM6 package. It integrates built-in bias resistors (R1=47kΩ, R2=47kΩ). Maximum ratings include VCEO of ±50V, IC of ±100mA, and total power dissipation of 300mW. Electrical characteristics specify a minimum DC current gain (hFE) of 80 at ±10mA/±5V, saturation voltage of 0.3V max at ±5mA/±0.25mA, and transition frequencies of 200MHz for the NPN and 250MHz for the PNP.

Feature Summary

• Integrates two devices with built-in bias resistors to simplify circuit design
• Reduces component count and manufacturing process steps
• Enables equipment miniaturization through compact packaging

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's latest documentation to confirm tape-and-reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring both NPN and PNP switching elements within a single footprint. The integrated 47kΩ bias resistors eliminate external resistor requirements. Verify that the required transition frequency meets the 200MHz or 250MHz threshold depending on the specific channel used.

Part Context

This part belongs to Toshiba's line of pre-biased transistors utilizing the PCT process. It consolidates discrete bipolar junction transistors and base resistors into a single surface-mount assembly, serving as a space-saving alternative to separate discrete components in logic and interface applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other dual BJT arrays only after verifying pinout compatibility and electrical parameter alignment with official datasheets.