RN4606(TE85L,F)

Overview

The RN4606 is a silicon NPN/PNP epitaxial type transistor with built-in bias resistors, utilizing Toshiba's PCT process. It integrates two devices in an SM6 (super mini type with 6 leads) package to simplify circuit design and reduce component count. Q1 is an NPN transistor with absolute maximum ratings of -50 V collector-emitter voltage and -100 mA collector current. Q2 is a PNP transistor rated at 50 V and 100 mA. Common characteristics include a total collector power dissipation of 300 mW and a junction temperature limit of 150 °C. The built-in bias resistors are R1: 4.7 kΩ and R2: 47 kΩ.

Feature Summary

• Integrates NPN and PNP transistors with built-in bias resistors in a single compact package
• Simplifies circuit design by reducing the quantity of external parts and manufacturing processes
• Utilizes PCT process for high reliability and performance

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to ensure correct packaging and reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributor as environmental declarations may vary by production batch. Review the latest datasheet version for any updates to electrical characteristics or mechanical dimensions before finalizing procurement orders.

Selection Notes

Select this component for applications requiring complementary NPN/PNP switching in a minimal footprint. Ensure the operating collector current remains within the 100 mA limit for both Q1 and Q2. Verify that the required bias resistor values of 4.7 kΩ and 47 kΩ align with the target circuit design parameters. Consider the SM6 package constraints for thermal management given the 300 mW total power dissipation rating.

Part Context

The RN4606 belongs to Toshiba's line of digital transistors with built-in bias resistors. These components are designed to replace discrete transistor and resistor networks, offering space savings and simplified assembly. The SM6 package provides a super mini form factor suitable for dense PCB layouts. This part serves as a direct replacement for similar dual-transistor bias-resistor combinations from other manufacturers where pin compatibility and electrical specs match.

Replacement Considerations

Check pinout compatibility when substituting with other NPN/PNP dual transistors. Verify that the replacement device meets or exceeds the 50 V voltage rating and 100 mA current capability. Ensure the built-in resistor values are comparable to avoid altering circuit bias points significantly.