RN4607(TE85L,F)

Overview

The RN4607(TE85L,F) is a dual bias resistor built-in transistor (BRIT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor within a single SM-6 surface-mount package. The device features an internal base resistor of 10 kOhms and an emitter resistor of 47 kOhms. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 200 MHz. Power dissipation is rated at 300 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with pre-biasing resistors in a compact SMD package
• Reduces printed circuit board space requirements and assembly complexity by replacing discrete components
• Optimized for high-speed switching applications with a 200 MHz transition frequency

Applications

• Switching circuits requiring complementary logic levels
• Inverter circuits for signal inversion
• Interface circuits connecting different voltage domains
• Driver circuits for low-power loads

Procurement Notes

Verify the complete ordering code including the suffix TE85L,F to ensure correct packaging and lead-free compliance. Confirm that the SM-6 package dimensions match the target footprint. Check RoHS status and moisture sensitivity level requirements against the specific manufacturing process constraints before finalizing procurement orders.

Selection Notes

Select this component when a matched NPN/PNP pair with fixed bias ratios is required. The 10 kOhm base resistance suits standard logic interface driving. Ensure the 50 V breakdown voltage meets the circuit's peak voltage demands. Consider the 300 mW power dissipation limit for thermal management in dense layouts compared to higher-power alternatives.

Part Context

This part belongs to Toshiba's RN46xx series of digital transistors designed for miniaturization. The SM-6 package provides a small footprint suitable for portable electronics. It serves as a direct replacement for discrete resistor-transistor networks in logic interfaces, simplifying bill-of-materials and reducing soldering points in consumer and industrial devices.

Replacement Considerations

The IMD9AT108 from Rohm Semiconductor is listed as a similar alternative. Verify pin compatibility and exact resistor values when substituting, as internal bias configurations may differ between manufacturers.