SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN4608(TE85L,F) is a dual digital transistor from Toshiba Semiconductor and Storage, integrating one NPN and one PNP epitaxial transistor with built-in bias resistors in an SM6 package. It operates at collector currents up to 100 mA and voltages of ±50 V, with a total power dissipation of 300 mW. The device features a typical transition frequency of 200 MHz for the NPN section and 250 MHz for the PNP section. Internal bias resistors are set at R1 = 22 kΩ and R2 = 47 kΩ, providing a resistance ratio of approximately 0.468.
Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging and lead times. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure design reviews account for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook.
Select this component when a matched NPN/PNP pair with integrated biasing is required for space-constrained designs. Verify that the 22 kΩ base resistor value aligns with the target drive current requirements. Check that the SM6 package dimensions fit the available PCB footprint constraints.
This part belongs to the RN4608 series of pre-biased transistors manufactured using Toshiba's PCT process technology. The series is designed to replace discrete resistor-transistor combinations, offering improved reliability and reduced manufacturing complexity for standard logic interface tasks.
Public confirmed substitute part numbers are not provided in the source material. Consult Toshiba sales representatives for cross-reference information or equivalent products meeting identical electrical specifications.