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The RN4609(TE85L,F) is a dual digital transistor containing one NPN and one PNP epitaxial type device within an SM6 package. It integrates built-in bias resistors (R1: 47kΩ, R2: 22kΩ) to simplify circuit design. The NPN transistor (Q2) supports a collector-emitter voltage of 50V, continuous collector current of 100mA, and a transition frequency up to 250MHz. The PNP transistor (Q1) provides -50V VCEO, -100mA IC, and a typical fT of 200MHz. Both devices share a total power dissipation rating of 300mW and operate within a junction temperature range up to 150°C.
Verify the specific ordering suffix TE85L,F against the manufacturer's latest documentation to confirm packaging details such as reel size or tape specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders.
Select this component when a complementary NPN/PNP pair with integrated biasing is required for space-constrained designs. Verify that the 47kΩ/22kΩ resistor ratio aligns with the target logic interface levels. Confirm that the 300mW total power dissipation limit accommodates the thermal requirements of the specific application environment.
This part belongs to Toshiba's series of pre-biased transistors designed to replace discrete resistor-transistor combinations. The SM6 package offers a small footprint suitable for modern portable electronics and dense PCB layouts. It serves as a direct replacement for older discrete configurations requiring matched NPN/PNP pairs with fixed bias networks.
Consult official substitution lists for equivalent dual digital transistors from Toshiba or other manufacturers. Verify pin compatibility and electrical parameter margins, particularly regarding the transition frequency and saturation voltage, before implementing any alternative components.