RN4610(TE85L,F)

Overview

The RN4610 is a dual silicon NPN/PNP epitaxial planar transistor with built-in bias resistors, housed in an SM6 package. It integrates one NPN (Q1) and one PNP (Q2) device, each paired with a 4.7 kΩ input resistor. The NPN transistor supports a collector-emitter voltage of -50 V and a collector current of -100 mA, while the PNP counterpart handles +50 V and +100 mA. Both transistors exhibit a transition frequency up to 250 MHz and a DC current gain ranging from 120 to 700. The total collector power dissipation is rated at 300 mW, with a junction temperature limit of 150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with fixed bias resistors in a compact six-lead surface-mount package
• Simplifies circuit design by eliminating external base resistors for switching and inverter applications
• Provides high-speed performance with transition frequencies reaching 250 MHz for interface and driver circuits

Applications

• Switching circuits requiring complementary logic levels
• Inverter circuits for signal phase reversal
• Interface circuits between digital logic families
• Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's current catalog to confirm packaging details and compliance status. Ensure that the application environment remains within the specified absolute maximum ratings for voltage, current, and temperature to maintain reliability. Consult the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing the design.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated biasing. The SM6 package offers a small footprint suitable for miniaturized equipment. Verify that the required current gain and saturation voltage meet the specific load requirements of the switching or driving application. Consider the complementary nature of the NPN and PNP pairs for push-pull or differential configurations.

Part Context

This device belongs to Toshiba's series of transistors with built-in bias resistors, designed to reduce part count and manufacturing complexity. The RN4610 specifically provides a complementary pair, unlike single-type variants such as the RN2710JE. It utilizes the PCT process for improved performance and reliability compared to older technologies.

Replacement Considerations

Direct functional substitutes may include other complementary bias-resistor transistor pairs in similar packages. Verify pinout compatibility and electrical parameters such as VCEO, IC, and R1 values. Cross-reference with Toshiba's internal cross-reference guides for confirmed equivalent part numbers.