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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN4611(TE85L,F) is a dual digital transistor from Toshiba Semiconductor and Storage, integrating an NPN (Q1) and PNP (Q2) epitaxial type transistor with built-in bias resistors in an SM6 package. Q1 features a collector-emitter voltage of -50 V, continuous current of -100 mA, and a minimum DC current gain of 120. Q2 provides a collector-emitter voltage of 50 V, continuous current of 100 mA, and a minimum DC current gain of 120. Both devices share a typical input resistance of 10 kΩ. The transition frequency reaches 200 MHz for Q1 and 250 MHz for Q2. Total power dissipation is rated at 300 mW.
Verify the specific ordering suffix against official Toshiba documentation before procurement. Confirm that the SM6 package dimensions and pinout align with the target PCB layout. Ensure thermal management meets the 300 mW total power dissipation requirement under expected operating conditions. Validate RoHS compliance status if required by local regulations.
Select this component when a complementary NPN/PNP pair with integrated base resistors is required. The 10 kΩ input resistance suits standard logic interface applications. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Consider the SM6 package size constraints during mechanical design.
This part belongs to Toshiba's line of silicon NPN/PNP epitaxial transistors utilizing the PCT process. It is designed as a pre-biased dual transistor array intended to replace discrete resistor-transistor combinations. The SM6 package offers a small footprint suitable for space-constrained portable electronics and general-purpose switching applications.
No public substitute part numbers are documented for this specific model.