RN46A1(TE85L,F)

Overview

The RN46A1(TE85L,F) is a dual pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single SC-74 (SOT-457) surface-mount package. The device features a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a power dissipation rating of 300mW. It supports operating frequencies up to 250MHz with a minimum DC current gain of 200.

Feature Summary

• Integrates complementary NPN and PNP transistors in a compact dual configuration
• Includes built-in bias resistors for simplified circuit design
• Optimized for high-speed switching applications with high frequency response

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Signal level translation between different voltage domains

Procurement Notes

Verify the specific suffix TE85L,F against the official Toshiba datasheet to confirm the reel packaging specification. Ensure the SC-74 footprint matches your PCB layout requirements. Cross-reference the electrical parameters with your system's voltage and current limits before finalizing the component selection.

Selection Notes

Select this component when space constraints require a dual BJT solution. It serves as a direct replacement for similar pre-biased dual transistors like the RN4606. Consider the 50V voltage rating and 100mA current limit to ensure compatibility with the target application's operational envelope.

Part Context

This part belongs to Toshiba's RN46xx series of pre-biased transistors. These devices are designed to reduce component count and assembly time by combining transistors and base resistors into a single package. The SC-74 package provides a small form factor suitable for dense consumer electronics and portable devices.

Replacement Considerations

The RN4606(TE85L,F) is a confirmed substitute part number for this component.