RN4901,LF

Overview

The RN4901,LF is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial transistor within a US6 surface-mount package. The device features built-in bias resistors with a ratio of 1:1, specifically R1 and R2 both at 4.7 kΩ. Key electrical parameters include a maximum collector current (Ic) of 100 mA, a collector-emitter breakdown voltage (Vceo) of 50 V, and a maximum power dissipation of 200 mW. The transition frequency ranges from 200 MHz to 250 MHz, with a minimum DC current gain (hFE) of 30 at 10 mA and 5 V.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors in a single compact package.
• Simplifies circuit design by reducing the quantity of external components and manufacturing processes.
• Utilizes a US6 ultra super mini type package for efficient space utilization in surface-mount applications.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix and packaging configuration when ordering, as variations such as LXHF(CT) may exist alongside the standard LF designation. Confirm RoHS compliance status and ensure the supplier provides official datasheets matching the exact part number variant to avoid discrepancies in resistor values or package dimensions during procurement.

Selection Notes

Select this component for designs requiring matched NPN/PNP pairs with fixed bias ratios. Ensure the 50 V voltage rating and 100 mA current limit align with the target application's load requirements. Consider the 200 mW power dissipation capability and thermal characteristics of the US6 package when determining heat management strategies for the final assembly.

Part Context

This component belongs to Toshiba's RN series of pre-biased transistor arrays, which are designed to replace multiple discrete components. The RN4901 specifically combines a silicon PNP epitaxial type and a silicon NPN epitaxial type using the PCT process, offering a standardized solution for logic interface and switching tasks where space is constrained.

Replacement Considerations

The PUMD15,115 from Nexperia is a functional equivalent featuring a 1 NPN/1 PNP configuration with identical 4.7 kΩ bias resistors and a 50 V rating. Verify pinout compatibility between the US6 and 6-TSSOP packages before substitution.