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The RN4901,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial transistor within a US6 surface-mount package. The device features built-in bias resistors with values of 4.7 kΩ for both the base (R1) and emitter (R2). Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Pd) of 200 mW. The component exhibits a minimum DC current gain (hFE) of 30 at 10 mA and 5 V, with transition frequencies specified at 200 MHz and 250 MHz.
Verify the specific suffix designation when ordering, as it indicates the tape and reel or cut tape packaging format rather than a change in electrical function. Confirm that the requested quantity aligns with the manufacturer's standard packaging specifications. Ensure compatibility with RoHS directives if environmental compliance is required for the assembly process.
Select this component when a compact solution requires both NPN and PNP switching capabilities within a single footprint. The integrated 4.7 kΩ resistors eliminate external components, reducing assembly steps. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements of the target application design.
This part belongs to the RN4901 series of digital transistors produced using Toshiba's PCT process technology. The series includes silicon epitaxial types designed for efficient signal processing. The US6 package variant represents an ultra-super mini form factor optimized for dense surface-mount layouts in consumer and industrial electronics.
Direct substitutes require matching the NPN/PNP configuration, 50 V rating, 100 mA current limit, and US6 package. Verify resistor values and hFE characteristics against the original specification to ensure circuit performance parity.