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The RN4902FE,LF(CT is a pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES6 surface-mount package. The device features built-in bias resistors with typical values of 10 kΩ for both the base (R1) and emitter (R2). Key electrical specifications include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 200MHz. The unit supports a maximum power dissipation of 200mW and exhibits a minimum DC current gain (hFE) of 50 at 10mA and 5V.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and compliance status. Ensure the requested variant matches the required RoHS3 specification and moisture sensitivity level. Cross-reference the distributor part number with the original manufacturer identifier to prevent substitution errors during procurement.
Select this component when a compact solution requires both NPN and PNP switching capabilities with integrated biasing. The 10kΩ resistor values are suitable for standard logic interface applications. Consider the 200MHz transition frequency for high-speed switching requirements. Verify that the 50V breakdown voltage meets the system's operational limits before finalizing the design.
This component belongs to the RN4902 series of digital transistors produced by Toshiba Semiconductor and Storage. These devices utilize a Silicon PNP/NPN epitaxial type construction based on the PCT process. The series is designed to replace discrete transistor and resistor combinations in space-constrained printed circuit board layouts.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's datasheet or authorized distributor databases for verified cross-references.