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Product Detailed Parameters
- Description：TRANS NPN/PNP PREBIAS 0.1W ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN4902FE(TE85L,F) is a pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial transistor within an Extreme-Super-Mini (ES6) package, utilizing the PCT process. The device features built-in bias resistors with typical values of 10 kΩ for both R1 and R2. Key electrical specifications include a maximum collector current (IC) of 100 mA, a collector-emitter breakdown voltage (V(BR)CEO) of 50 V, and a maximum power dissipation of 100 mW. The minimum DC current gain (hFE) is specified as 30 at IC=10mA and VCE=5V.
Feature Summary
- Integrates dual NPN and PNP transistors with built-in bias resistors to reduce component count
- Utilizes PCT process technology for high-speed switching performance
- Packaged in an Extreme-Super-Mini (ES6) form factor for compact board layouts
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against the manufacturer's current datasheet to confirm packaging details and compliance status. Confirm availability as product lifecycle status may vary. Ensure the ES6 package footprint matches the design requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact solution requires both NPN and PNP switching capabilities with integrated base biasing. The 10 kΩ resistor values are suitable for standard logic interface applications. Verify that the 100 mA collector current and 50 V voltage ratings exceed the circuit's maximum operating conditions.
Part Context
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRBTs). These devices combine bipolar junction transistors with internal resistors to simplify circuit design. The RN4902FE specifically pairs complementary NPN and PNP elements, offering a space-saving alternative to discrete transistor and resistor combinations in signal processing hardware.
Replacement Considerations
The RN4902FE(TPL3,F) is listed as a similar product variant. Verify pin compatibility and exact resistor tolerances before substitution. No other direct cross-manufacturer equivalents are confirmed in the provided documentation.
