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The RN4903,LF(CT is a dual digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP pre-biased bipolar junction transistor within a US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. Internal biasing resistors are typically 22kΩ for both base and emitter connections. The component features a transition frequency of 200MHz to 250MHz and a maximum power dissipation of 200mW. It meets AEC-Q101 automotive qualification standards.
Verify the specific suffix configuration against official Toshiba documentation to ensure correct resistor values and automotive grade status. Confirm RoHS compliance and moisture sensitivity level requirements prior to procurement. Cross-reference distributor part numbers with manufacturer identifiers to avoid counterfeit components during sourcing.
Select this component when a complementary pair of pre-biased transistors is required for phase inversion or push-pull configurations. Ensure the 50V voltage rating and 100mA current capacity align with the target load specifications. Verify that the 22kΩ internal resistance matches the driving source impedance requirements for the intended application speed.
This part belongs to the RN49xx series of dual digital transistors from Toshiba. These devices are designed to replace discrete resistor-transistor networks, reducing component count and assembly time. The RN4903 variant specifically utilizes 22kΩ biasing resistors for both the NPN and PNP elements within the shared US6 package structure.
Direct substitutes must match the US6 package, 50V/100mA ratings, and 22kΩ/22kΩ resistor configuration. Verify pinout compatibility and thermal characteristics before substitution. Consult official cross-reference lists for qualified alternatives.