RN4904FE,LF(CT

RN4904FE,LF(CT

$0.19
  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-

SKU:cc1bc1f8429e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN4904FE,LF(CT

Overview

The RN4904FE,LF(CT is a pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor (BJT) within a single surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Internal bias resistors are configured with R1 at 10 kΩ and R2 at 47 kΩ for both transistors. Key electrical specifications include a minimum DC current gain (hFE) of 80 at 10mA and 5V, a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current, and a transition frequency of 200MHz. The component has a maximum power dissipation of 200mW and utilizes the ES6 supplier device package.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors to reduce external component count
  • Designed for high-speed switching applications with a 200MHz transition frequency
  • Utilizes an extreme-super-mini package format to facilitate compact circuit board layouts

Applications

  • Switching circuits requiring dual polarity control
  • Inverter logic gates in low-power digital systems
  • Interface driver circuits for microcontroller I/O expansion

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging type and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the selected distributor provides traceability data consistent with Toshiba Semiconductor and Storage standards for this discontinued or active series part number.

Selection Notes

Select this component when a compact solution for simultaneous NPN and PNP switching is required without external biasing networks. Compare internal resistor values of 10kΩ and 47kΩ against circuit drive requirements. Evaluate the 50V breakdown voltage and 100mA current limits against peak load conditions. Consider the ES6 package dimensions for PCB footprint constraints relative to alternative SOT-363 or US6 packages.

Part Context

This part belongs to the Toshiba RN49xx series of pre-biased digital transistors. These devices are engineered to replace discrete transistor-resistor combinations, thereby simplifying schematic design and reducing assembly costs. The series typically offers various resistor configurations and package options to suit different density and performance needs in consumer and industrial electronics.

Replacement Considerations

Consult official substitution lists for equivalents such as the RN4904FE(TPL3,F) or other RN49xx variants with matching pinouts and electrical characteristics. Verify that any substitute maintains the same NPN/PNP configuration and internal resistance ratios to ensure circuit compatibility.

RN4904FE,LF(CTRN4904FE,LF(CT
$0.19
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