RN4904FE,LXHF(CT

Overview

The RN4904FE,LXHF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal biasing resistors in a compact surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA per transistor. Internal base resistor (R1) and emitter resistor (R2) values are typically 22 kOhms each, providing a resistance ratio of 1. Key electrical parameters include a minimum DC current gain (hFE) of 70, a transition frequency (fT) ranging from 200 MHz to 250 MHz, and a maximum power dissipation (Pd) of 200 mW. The component is qualified under AEC-Q101 standards for automotive applications.

Feature Summary

• Dual NPN configuration with integrated biasing resistors simplifies circuit design by reducing external component count.
• Automotive-grade qualification ensures reliability and compliance with stringent industry standards.
• High-speed switching capability supported by a transition frequency up to 250 MHz.

Applications

• Automotive logic circuits and interface drivers
• General-purpose switching applications requiring high speed
• Digital signal processing input/output buffering

Procurement Notes

Verify the specific suffix LXHF(CT against the manufacturer's official datasheet to confirm packaging type and tape-and-reel specifications. Ensure that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements before finalizing procurement decisions.

Selection Notes

Select this component when a dual NPN pre-biased solution is required in a small form factor. Compare the 22 kOhm internal resistor values against load requirements to ensure adequate drive capability. Verify that the 50 V voltage rating exceeds the maximum operating voltage in the target application circuit.

Part Context

This part belongs to Toshiba's RN49xx series of digital transistors, which are designed to replace discrete resistor-transistor networks. The FE variant typically denotes a specific pinout or internal configuration within the US6/ES6 package family, optimized for space-constrained printed circuit board layouts.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased transistors with similar 50 V ratings and 100 mA current capacity. Verify pin compatibility and internal resistor tolerances before substitution to maintain circuit performance integrity.