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The RN4905FE,LF(CT is a dual pre-biased BJT array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial transistor within a US6 surface-mount package. The device features built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. The unit power dissipation is rated at 200mW. DC current gain (hFE) is specified with a minimum value of 30 at 10mA and 5V. Transition frequencies are listed as 200MHz for the NPN and 250MHz for the PNP element.
Verify the specific suffix configuration when ordering, as variations such as LF or CT indicate packaging or compliance differences that do not alter the core electrical function. Confirm availability status, as this part number may be subject to discontinuation or lifecycle changes. Ensure the selected variant matches the required tape and reel or cut tape format for the intended assembly process.
Select this component when a compact solution requires both NPN and PNP switching capabilities in a single footprint. The integrated bias resistors eliminate the need for external base resistors, reducing board space and assembly steps. Verify that the 50V voltage rating and 100mA current limit meet the specific load requirements of the target application before finalizing the design.
This device belongs to Toshiba's RN series of pre-biased transistors, which are designed to replace multiple discrete components. The RN4905FE specifically pairs NPN and PNP types, offering a balanced solution for push-pull or differential signaling applications where minimal board area is critical.
Direct substitutes include other Toshiba models from the same family, such as the RN4905FE(TPL3,F). Cross-manufacturer replacements require careful verification of pinout compatibility, hFE ranges, and thermal characteristics to ensure functional equivalence.