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The RN4905FE,LXHF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial transistor within an Extreme-Super-Mini US6 surface-mount package. The device features built-in bias resistors to reduce external component count. Key electrical specifications include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a total power dissipation of 200mW. The DC current gain (hFE) is specified at a minimum of 80 at 10mA and 5V. Transition frequencies are rated at 250MHz for the NPN and 200MHz for the PNP element.
Verify the specific suffix LXHF against the manufacturer's latest datasheet to confirm pinout compatibility and resistor values. Confirm RoHS3 compliance status directly with the supplier. Check for obsolescence notices or last-time buy notifications from Toshiba Semiconductor and Storage before finalizing procurement plans.
Select this component when a dual NPN/PNP configuration with integrated biasing is required in a US6 package. Ensure the 50V voltage rating and 100mA current capacity meet the circuit requirements. Compare the internal resistor values (R1: 2.2kΩ, R2: 47kΩ) with design specifications to ensure proper biasing conditions are met without additional external components.
This part belongs to the RN49xx series of pre-biased transistors from Toshiba. These devices are designed to replace discrete BJT and resistor combinations. The US6 package is a standard small-outline footprint suitable for automated surface-mount assembly processes commonly used in consumer electronics and industrial control boards.
The RN4985,LXHF(CT is listed as a parameter-equivalent substitute. Verify electrical characteristics and pin compatibility before substitution. Other members of the RN49xx family may offer different resistor values or transistor types.