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The RN4905,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal biasing resistors are configured with R1 at 2.2 kOhms and R2 at 47 kOhms. Key electrical specifications include a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. Transition frequencies are rated at 200MHz for the NPN and 250MHz for the PNP element, with a maximum power dissipation of 200mW.
Verify the specific suffix configuration when ordering, as variations such as LXHF may denote different internal resistor values or packaging formats. Confirm that the LF(CT designation aligns with the required cut tape or reel specifications for your assembly line. Ensure compatibility with RoHS3 directives if environmental compliance is mandated for the final product deployment.
Select this component when a matched NPN/PNP pair with integrated biasing is required for space-constrained designs. The 2.2k/47k resistor ratio suits standard logic interfacing tasks. Consider the 50V rating and 100mA current limit against load requirements. Verify thermal management needs given the 200mW power dissipation limit in the small US6 package.
This part belongs to the RN4905 series of digital transistors from Toshiba. It is distinct from the RN4901, which features different resistor values (4.7k/4.7k). The RN4905 series is designed for high-density mounting and offers point-symmetry in its pinout configuration, facilitating easier layout compared to asymmetric alternatives.
Public documentation identifies the RN4985,LXHF(CT as a parameter-equivalent substitute. Verify pinout compatibility and exact resistor ratios before substitution, as other RN-series parts may have differing internal resistance configurations.