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The RN4905T5LFT is a pre-biased dual transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial planar transistor within a single US6 surface-mount package. The device features built-in bias resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a total power dissipation of 200mW. The NPN section offers a transition frequency of 250MHz with a base resistor of 2.2kΩ, while the PNP section provides a 200MHz transition frequency with a 47kΩ emitter resistor.
Verify the specific suffix T5LF against the manufacturer's official documentation to confirm pinout compatibility and marking codes. Ensure the ordering part number matches the required tape and reel configuration for automated assembly processes. Cross-reference the RoHS status and moisture sensitivity level with current project requirements before finalizing procurement.
Select this component when space constraints necessitate a dual-transistor solution with integrated biasing. Compare the 2.2kΩ and 47kΩ internal resistor values against circuit drive requirements to ensure proper saturation and cutoff characteristics. Verify that the 50V breakdown voltage and 100mA current limits exceed the maximum operational stresses of the target application.
This part belongs to the RN4905 series of pre-biased bipolar junction transistor arrays. It utilizes an Extreme-Super-Mini US6 package to minimize board space. The device is designed as a direct replacement for discrete resistor-transistor networks in consumer electronics and industrial control systems where size reduction is critical.
The RN4985 is documented as a parameter-equivalent substitute. Verify pin-to-pin compatibility and electrical tolerance alignment before substitution.